Sot23 16 Row Of Encapsulation Material Buckling Problem Of Research

With large scale product assembly of semiconductor discrete device, to develophigher production and lower cost of higher density lead frame product was placed greatemphasis by corporation. In new product process, the warpage issue maybe cause repeatdesign and qualification and slow down development progress, because warpage’s leadframe will cause location shift, lead frame damage, broken package of device, brokenwire or lead damage and so on failure issue, which will possible make corporationshutdown the product line, further to cause equipment and human resource waste anddelivery delay to customer, so that study new method to avoid lead frame warpagebecome a urgent demand.Previous research works main focused on IC package warpage study by coefficientof thermal expansion (CTE) of epoxy molding compound (EMC), residual tresses andmold process parameter. In this thesis, lead frame itself warpage was studied. First,theory analysis warpage mechanism and study high density lead frame packagestructure show mold compound, lead frame material and mold gate related designposition are significant factors to cause warpage; Second, in molding process and highdensity lead frame package structure, DOE result shows through-gate to be significantfactor. Third, build finite model and analysis mold compound, lead frame material, moldthrough-gate related position in upper and down mold chase, through-gate broken aftermolding effect for warpage, further to find solution for lead frame warpage.This thesis study can provide a newer solution and method and theory reference forhigh density lead frame warpage issue in semiconductor assembly and test and newproduct development.