The Analysis And Design Of The 60 Ghz Cmos Power Amplifier

In recent years, with the increasing demand for short-distance high-speed wireless communications, which promote the research and development of RF front-end in60GHz millimeter-wave band. As one of the most critical module in RF front-end, power amplifier also limit the whole performance mostly, so the design and development of it is particularly critical. Since the1990s, MMIC chip-set have been reported for60GHz RF applications almost using technologies like III-V compounds. Despite their extinguished performance, the struggle in cost and limited integration can hardly be solved. Confronting this trend, the advantage of CMOS technology is gradually reflected in the potential superiority of the millimeter wave band because of it’s rapidly developing.Under this condition, the analyze and design of60GHz CMOS power amplifier in three systematic approach have been done in order to work out a topology that can be easily improved and is scalable to contribute to further works.1) First of all, we analyzed and summarized the trend of CMOS technology and it’s characteristics for design.2) Then we designed a3-stage common-source single-ended power amplifier with on-chip spiral inductors. It’s linear gain and maximum linear output power is5dB and5.9dBm, respectively. Saturated output power is about9dBm.3) Then utilized two different ways of transformer coupled3-stage pseudo-differential power amplifier, and get a linear gain about14dB, saturated output power about12dBm.