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Power Mosfet Avalanche Energy Test Method And Principle Analysis

Posted on:2013-10-18Degree:MasterType:Thesis
Country:ChinaCandidate:N TanFull Text:PDF
GTID:2248330374486597Subject:Software engineering
Abstract/Summary:PDF Full Text Request
This article has analyzed the power MOSFET avalanche breakdown reason, theparasitic component is playing the decisive role in the MOSFET avalanche breakdown,and the parasitic transistor’s activation turn on is result in avalanche breakdown.Exception on dVDSand failure analysis, to establish the relationship between dVDSandavalanche energy. And improve a more reasonable test method can improve thereliability of the device to avoid device avalanche breakdown occurs in the applicationprocess. Optimize the production process, to ensure the device meets the requirementsof avalanche energy.Currently dVDSis the size of the constant heat resistance of the transistor is alsoinevitable VDMOSFET, dVDSdecided the whole cooling capacity of the device, is alsoan important indicator of the device temperature rise. The dVDSand device breakdowncharacteristics between little research, especially the relationship between research dVDSand avalanche energy but actually dVDSthe serious impact on the reliability of thedevice. There has few studies between the dVDSand device breakdown characteristics,especially the relationship between research dVDSand avalanche energy but actuallydVDSthe serious impact on the reliability of the device. So when testing the dVDSwill beable to establish an effective method for avalanche energy considerations, and toestablish a more reasonable avalanche energy test methods. To improve and optimizethis test method and the production process to ensure the reliability of manufacturedproducts to avoid the device to avalanche breakdown occurs in the application process.Understanding of the phenomenon and reasons different failure mechanisms of thedevice, that’s has important significance to master the VDMOSFET in application.Actual large-scale production to meet a variety of application requirements must beclassified in accordance with the discrete nature of the device avalanche energy. Selectthe appropriate upper limit; at the same time ensure the quality of the application ofstandards needed to achieve the requirements of the yield. After the classification dVDS,so the device performance consistent quality purposes.Experimentally obtained with dVDSand avalanche energy, establish process system in the production control, reduce the dVDSon device’s avalanche energy effect.Departure from the test can only plays the remedial measures, should give full play tothe performance of the device, must proceed from the production process, control thequality of the dVDSmore purposeful. Control and reduce dVDS, it makes sense to improvethe device’s avalanche energy.
Keywords/Search Tags:VDMOSFET, parasitical transistor, avalanche breakdown, avalancheenergy test, dVDS
PDF Full Text Request
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