Fabrication And Photoelectric Properties Of Graphene By Chemical Vapor Deposition Method

Chemical vapor deposition (CVD) is a significant synthesis route of large-area and high-quality graphene films. However, layer-controlled synthesis of graphene on polycrystalline metallic films remains a great challenge. For resolving this problem, the following researches were carried out in this dissertation:(1) Graphene films were synthetized on wafer-scale nickel surface through CVD method. The layer number of the graphene films is controlled by modulating the experimental conditions of the CVD process, such as reaction gas, the thickness of Ni film, growth time, and etc.. We also fabricate high quality graphene films using CVD method on other substrates, for instance, copper foil, alloy film of nickel and copper, nickel foil and nickel foam.(2) The electrical properties of the graphene films fabricated on the nickel films were studied through hall and FET devices. The results shows that the highest room-temperature mobility of s the ynthesized grapheme film is～2,900cm2V-1s-1. It is also demonstrated that the twisted few-layer grapheme films possess excellent transparent conductive performance. The lowest sheet resistance is～100Ω per square at～92%transmittance.