| For infrared detectors is more and more extensive application in military, medical,environmental monitoring and other areas, this paper presents a design scheme andpreparation process of the integrated infrared detector. Integrated crystal infrared detectorwhich is a kind of non-refrigeration detector has the following characteristics:1) run at aroom temperature with low manufacturing cost;2) respond to various wavelengths of infraredradiation;3) have an output signal in an alternate infrared radiation. Integrated crystalinfrared detector，which is the object of the research，is studied on the basis of the preparationprocess. At last, the prepared detector is tested.In the preparation process, after analyzing the detector structure, the first step was todesign the manufacturing technological process of detector. Then a detailed study of thebonding process, grinding and polishing process and sedimentary thin-film electrode processwas carried out. For bonding process, we made the comparison study of the environment andthe pros and cons of various bonding process. Finally, we selected layer bonding process andchose the RZJ-304glue as the intermediate layer after the experiment. For grinding andpolishing process, we selected the mechanical grinding process which commonly used athome. At the same time grinding equipment, grinding discs, polishing pad, grinding fluid andpolishing slurry was investigated theoretically and experimentally. For sedimentary thin-filmelectrode process, we analyzed a variety of methods and chose magnetron sputtering processafter experimental verification.In the whole process of the preparation of detector, we have done a series of tests: using thethickness gauge and atomic force microscopy to test the thickness, surface roughness and thelapping uniformity of thin wafer which was grinded；using scanning electron microscopy totest the thickness, morphology and compactness of the sputtered thin-film electrode; usingthe system made by ourselves to test sensitive unit dielectric constant and dielectric loss of the detector; using our own system, a preamplifier circuit and signal conditioning circuit totest frequency response characteristics of the detector, the output response of differentthickness of the sensing element and the output response of different sensitive area. On thisbasis, we successfully completed the integrated crystal infrared detector.In summary, this paper designs a new process flow, completes fabrication of integratedcrystal infrared detector with the new bonding process of the intermediate layer and thegrinding and polishing process, and builds a response test system of the detector.The testresults show that output response of the detector is obvious and verify the rationality of thedesign of the detector. It provides a reference for process optimization, application and testmethod of infrared detector in the future. |
