Zno Piezoelectric Thin Film Pressure Sensor Research

With the development of science and technology, the sensor requirements of function are getting more importantr. ZnO piezoelectric thin film pressure sensor by MEMS fabrication has the advantage of high sensitivity and miniaturization. It is difficult to make the preparation process of the composite micro-cantilever sensor, and there are compatibility technology problems between the layers. This paper mainly designed the structure of the sensor. Through the study of MEMS process technology, also designed the process of ZnO piezoelectric thin film sensor, and processed the microcantilever.Firstly a cantilever structure of ZnO piezoelectric thin film micro-force sensor was designed. The equation mode of the force and charge were established Analysis of the conversion efficiency of the force and charge by the length and width of the microcantilever.Then the the magnetron sputtering process parameters which have affected deposition of ZnO piezoelectric thin films was studied, the thin film preparation technology have been optimized Successfully prepared the dense and adhesion ZnO piezoelectric film.According to the experimental conditions, improve the micromaching process compatible of ZnO piezoelectric microcantilever to avoid the corrosion problem of the ZnO layer. The process of ZnO piezoelectric thin film microcantilever and five masks of piezoelectric sensor were designed.Combined with the laboratory specific conditions, the preparation and properties of ZnO piezoelectric thin film were researched by adjusting and improving the above process steps. Finally, designed the process of ZnO piezoelectric thin film microcantilever, and completed the production of the composite micro-cantilever structure.