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Study On Thick-film Oxygen Sensor Of SrTiO3

Posted on:2007-11-03Degree:MasterType:Thesis
Country:ChinaCandidate:J J LiuFull Text:PDF
GTID:2218360302469245Subject:Materials Physics and Chemistry
Abstract/Summary:PDF Full Text Request
The polycrystalline oxide semiconductor LaXSr-1XTiXM1-YO3-δwas prepared by solid state synthesis reaction at high temperate, which was doped several elements such as La, Mg, Al, Mn and Fe to SrTiO3.Thick film oxygen sensor was made of it. Resistance-temperature relationship and sensitivities of the samples were investigated, and the electrical conduction and sensitivity mechanism was explained properly.SrTiO3 oxygen sensor has been studied by many people, but it has not been used in real-life yet. The primary problems are high resistant and its resistance-temperature relationship is not good, and sensitivity and stability should been promoted.The samples were detected by SEM and X-ray diffraction instrument. Within 600-800℃,the resistance of the samples is just about several hundred Ohm. The resistance-temperature-property of the SrTiO3 thick film oxygen sensor was promoted by doped several n-type and p-type materials at the same time.The results of the experiment shows that the samples doped by La, Mg, Al, Mn and Fe can settle the problems such as the resistance of component was too high and the resistance-temperature-property was not good enough. It also extends the p-type conducting region of the oxygen sensor. The optimal work temperature of the samples is 650℃.
Keywords/Search Tags:SrTiO3, Multi-additions, Oxygen-sensing-property, Resistant-temperature -property, Oxygen sensor
PDF Full Text Request
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