| Reflective semiconductor optical amplifier (RSOA) has many advantages, such as small volume, low consumption, fast response time, and it can make the incident light gain double-pass gain. at present RSOA has been used in wavelength division multiplexing passive optical network (WDM-PON). As the modulator, RSOA can replace expensive tunable laser or other wavelength selection devices, at the same time have the ability of reflection and amplification. The main task of this paper is to research the static properties of RSOA, to optimize the parameters which influence RSOA so as to is to make RSOA more suitable to production.The ideal one-dimensional static model is established through segmenting method, the amplified spontaneous emission noise is not considered in the model. The distribution of the concentration of carriers and optical power in the active region is got through simulating numerically static model, and then the influence of the length of the active region, end reflectivity, injection current on RSOA is researched. A general model is also established, the amplified spontaneous emission and the reflectivity of both ends is considered, the optical power and noise spectrum is analyzed in detail, the influence of the amplified spontaneous emission is described. Based on SOA, the two model of RSOA are established, and then optimizing the parameters of RSOA is realizd. |
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