Research On Technology Of Gas Delivery System In Multi-chamber Metal Organic Chemical Vapor Deposition Equipment

MOCVD(Metal Organic Chemical Vapor Deposition)technology is the key technique in producing GaN films.Now the research of MOCVD technology in China is in the primary stage and there is no domestic manufacture can offer the equipment with high throughput. The equipments industry needed are all imported and this fact is a big block in the development of the LED lighting in the country.Reactor is the key part in the MOCVD equipment. Several types of MOCVD reactors are presented,the comparative analysis have been performed between systems from the domestic and foreign. The gas delivery system of the equipment is deeply investigated. The knowledge of fluid and vacuum is introduced first offering theoretical foundation for the latter calculation. Second,the gas delivery structure according to the control of two parameters ,including pressure and mass flow,is study from the point of effecting the quality of wafer.Third ,the important datas of the exhaust vacuum pipe are obtained through calculation and these datas offer reference for the selection of vacuum dry pump.Last,the technology of ALD(Atomic Layer Deposition) is integrated into the MOCVD equipment in order to improve the quality of the films growned in MOCVD equipment.The requirement of developing multi-chamber is discussed from the view of improving the quality and quantity of the wafers.Gas delivery structure shareing,the design principle of gas delivery system is proposed.The schemes of delivery of MO source and the exhaust vacuum pipe are provided in dual-chamber MOCVD equipment based on the former introduction about the important gas delivery structure.The formula deciding the diameter of the tube is also given.The study of gas delivery system will give theoretical referrence for the manufacturer of dual-chamber equipment in the near future.