Multi-field Coupling Analysis And Parameter Optimization Of MOCVD Reactor Chamber

In recent years,the third generation of semiconductor materials,represented by Ga N and Al N,has gradually become the focus of attention in the electronic field due to their wide band gap,wide range of transmission ratio,high thermal conductivity,excellent chemical stability and thermal stability,high temperature resistance and corrosion resistance.MOCVD technology is the mainstream method used in the preparation of the third generation of semiconductor materials.In the process of preparing materials with MOCVD equipment,there are a variety of complex physical fields in the reaction chamber,in which the uniformity of the temperature distribution on the substrate surface plays a decisive role in the quality of the epitaxial material.Therefore,it is important to study the influence mechanism of relevant parameters on the surface temperature distribution and the coupling between magnetic field and temperature field.And it also lays the foundation for subsequent temperature control.In this paper,the electromagnetic simulation software Maxwell and finite element simulation software Ansys were used to analyze the electromagnetic field and temperature field of graphite base and the substrate in MOCVD reactor by induction heating.The influence mechanism of the excitation current intensity,frequency,coil number and convection heat transfer coefficient on the electromagnetic field and temperature field is studied and analyzed.The following conclusions are made in this paper: the increase of current intensity and frequency will increase the amplitude of magnetic induction;and the increase of current frequency will also shift the magnetic induction line to the direction of the base edge,which directly affect the uniformity of the magnetic field distribution;the enhance of the current intensity will make steady temperature of the base and substrate rise obviously;the increase of current frequency also causes a slight increase in the steady state temperature,and the skin depth will be reduced as well which causes the heat to be concentrated at the edge of the base to make the temperature field even worse.It is also found that the steady state temperature amplitude in the base and the substrate decreases with the increase of the convective heat transfer coefficient.Increasing the number of coil turns also increases the amplitude of the steady temperature in the base and the substrate.The numerical value of heat transfer coefficient which can produce good temperature effect during the preparation of semiconductor materials by MOCVD equipment is determined in this paper.The parameters of current intensity,frequency,coil number are optimized.And the results of the optimization are simulated and verified.At the end of the paper,the radial temperature distribution curve on the surface of the substrate is obtained.The optimized simulation results can well meet the requirements of temperature control in the preparation of third generation semiconductor materials including Al N.