Study On The Damage Characteristics Of Semiconductor Bridge Under Electrostatic Discharge

It is important to reveal the mechanism, features and evaluation methods of semiconductor bridge (SCB) under the electrostatic field for the design of the protection measures against the electrostatic discharge (ESD), thus it would be widely used in the increasingly complicated electromagnetic environment. In this thesis, the influence of the ESD on the typical semiconductor bridge (TSCB) and Micro semiconductor bridge (MSCB) is discussed as follows:(1) The invalidation criteria of SCB with ESD is studied, which includes emission microscope (EMMI), the ablation areas of the bridges, I-V curve and the resistance fluctuations.(2) T-test was employed to test the ignition energy and function time, and obtained that: 22kV is the invalidation threshold voltage of TSCB with ESD, however, the invalidation threshold voltage of MSCB is 14kV.(3) The features of SCB with ESD were evaluated by ignition experiments via D-optimal method, and concluded that:compared with the bare bridge, SCB which suffered ESD have the lower whole ignition voltage, longer response time of current peak, which indicated that the electrostatic make the bridge more sensitive and reduce the ignition reliability of SCB; In the case of plasma ignition, the secondary peak of voltage (the formation of plasma) about SCB with ESD was delayed; meanwhile, in non-plasma ignition, there is a difference between TSCB and MSCB. For TSCB, the peak current and voltage were delayed a little, but for MSCB, they were almost invariant. In additional, the I-V curve character of TSCB with ESD decreased along with the increasing of discharging voltage, but the different results was obtained in MSCB; Besides, SCB was taken to the experiment of human being discharge, and found that the firing probability is 0, so the human being discharge is safe to SCB.(4) Finally, the effect of multiple discharging on SCB was disscussed in this thesis. It is found that there was no melting zone about the film of TSCB until the times of discharging achieved to 12. But for MSCB, the ablation areas of the bridge is enlarging by exponential growth along with the increasing of discharging times, the resistance of the bridge have changed dramatically, and there is a significant difference about I-V curve character among the MSCB which suffered different discharging times. What's more, MSCB would be break out when the discharging times reaches to 8. Therefore, I-V curve character and the resistance fluctuate evaluation are considered as the criteria of the SCB which suffered multiple discharging.