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The Study On Semiconductor Bridge Intelligent Ignition Controlling Interior Ballistic Performance

Posted on:2013-10-15Degree:DoctorType:Dissertation
Country:ChinaCandidate:M F LiuFull Text:PDF
GTID:1222330395483687Subject:Armament Launch Theory and Technology
Abstract/Summary:PDF Full Text Request
The purpose of this research is to eliminate the effect of temperature on interior ballistic performance. From the point of ignition, the intelligent control ignition system is used to change the ignition intensity under different temperatures to realize the changing interior ballistic performance. The main parts of this research are concluded as follows:(1) Double one-dimensional two-phase flow interior ballistics mathematical model under center ignition is established and its numerical simulations are conducted. The change laws of interior ballistic parameters are analyzed. Base on the modeling results, the effect of different factors of the interior ballistic performance are discussed, such as particle size, ambient temperature and ignition factors.(2) To decrease the effect of temperature on interior ballistic performance, the choice of initiating devices is studied. The mechanism and process of heat transfer of Semiconductor Bridge initiating devices is studied. The model of Semiconductor Bridge device strongly transient initiating process is established, and the function mechanism of Semiconductor Bridge is analyzed. The temperatures rising model which describe the process of Semiconductor Bridge generating plasma is established, and pay more emphasis on analyzing the influence of several factors on the generating plasma, then the simulation data is compared with experimental data. The multi-section model of describing process of circuit applied on Semiconductor Bridge is established, dynamic resistance of Semiconductor Bridge and phenomenon are studied. And it is established that the effect of Semiconductor Bridge on circuit, analyze the influence of different size and structure on electrical performance.(3) Based on the basic equations of semiconductor physics and heat transfer, the model of Semiconductor Bridge before melting is established. The relationship among the carrier concentration and temperature, the mobility of carrier, the effect of external voltage on Semiconductor Bridge temperature distribution and electron density distribution is discussed. It is proposed that the process of Semiconductor Bridge generating plasma is disc discharge with the establishment of its math model. And the discharge characteristic is analyzed.(4) The controlled parameters and suited structure and packing structure are discussed. The intelligent ignition system based on DZ32chip is designed and made. The intelligent ignition system includes both hardware and software. And the hardware of system consists of the signal modulator circuits, keyboard and LCD display circuits, RS-485serial communication and control circuits. The software includes the communication between DZ32chip and upper pc, and the main function of software includes data acquisition, data store and data communication.
Keywords/Search Tags:Low temperature sensitivity charge, Semiconductor Bridge, Functionmechanism, Ignition model, Interior ballistics, Two-phase flow, Intelligent ignition, DZ32chip
PDF Full Text Request
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