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Numerical Simulation And Theoretical Analysis On Semiconductor Bridge Ignition

Posted on:2010-09-21Degree:MasterType:Thesis
Country:ChinaCandidate:X W LiuFull Text:PDF
GTID:2132360275998817Subject:Armament Launch Theory and Technology
Abstract/Summary:
In order to attain the requirement of the contemporary high-performance guns and aerospace technology ignition which demands speediness, consistency and security, the semiconductor bridge (SCB) igniter is rapidly developed. The research is developed and aims at the semiconductor bridge (SCB) ignition. The theoretical analysis and the numerical simulation on the process of the SCB ignition are studied in this dissertation. The main parts are concluded as follow:a) The working mechanism of SCB is studied by analyzing the special nature, input energy, critical energy and the heat transfer mechanism.b) Through analyzing the Non-Fourier transient heat transfer process of the SCB ignition, the one-dimensional and the two-dimensional mathematic model are established. Both of the models are numerically calculated with Dufort-Frankel scheme, and the principal factor for the ignition character of SCB during the process of ignition.c) Combining with the one-dimensional model of the SCB ignition, the influence of the random factors during the process of SCB ignition are revealed by Monte-Carlo method.
Keywords/Search Tags:Semiconductor Bridge (SCB), plasma, ignition model, Numerical simulation, Monte Carlo method
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