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The W-band Injection Locked Amplifier

Posted on:2011-10-28Degree:MasterType:Thesis
Country:ChinaCandidate:K LiuFull Text:PDF
GTID:2208360308966484Subject:Electromagnetic field and microwave technology
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In recent year, the developing of millimeter wave is very fast. Because of the huge development of devices and technology, millimeter wave devices are applied broadly in many areas such as communication, remote sensing, radar system, guiding of missile and radiation astronomy.In millimeter wave system, one frequency source is indispensable. In common situations, there are three main methods to get frequency source with high stability: (1) using high Q cavity; (2) using phase-locked loop circuit (3) using injection-locked circuit. Waveguide cavity, coaxial cavity, and substrate resonant cavity with high Q are used to stabilize the source frequently, but all above have problem of bad temperature stability. The method using phase-locked loop circuit is more popular. Therefore, this kind of circuit is offer complicated, especially in millimeter wave, which is high and may cause the deterioration of spurious response. Injection-locked technology utilized as stabilizing frequency and amplifying in microwave frequency has some merits such as simply structure, low cost and realizing easily, especially in the millimeter wave comparing to other technologies.This dissertation generally presents the actuality of millimeter wave solid-state source firstly. The work characteristics of GUNN diode and IMPATT diode are introduced. Then, the impedance of diode is elementarily calculated using the diode's classic model and primary parameter. We choose cavity structure applied in this circuit and then equivalent circuit is used to realize the match of diode. Utilizing the charge and discharge characteristic of LC circuit and the switching trait of field effective transistor, impulse bias circuit with hundred-ns level impulse is designed. Through testing with 3 ohm load, the delay of rising or descending is lower than 20 ns, the peak voltage can be modulated between 10V-25V.Based on the fundamental principle of injection-locked theory, this dissertation has found a ideal method to realize a injection-locked amplifier with simple structure, low cost and strong stability. At last, we modulate the continuous amplifier. the input power is -1 dBm in 97GHz, and a 6 dBm signal is got. The output peak power of IMPATT oscillators with pulse width 100ns is 0.5 mW and the delay of rising or descending is lower than 10 ns...
Keywords/Search Tags:W band, pulse modulator, Gunn, IMPATT, injection-locked, amplifier
PDF Full Text Request
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