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Nano-crystal Floating-gate Structure Advanced Memory And Analog

Posted on:2010-08-14Degree:MasterType:Thesis
Country:ChinaCandidate:R S NingFull Text:PDF
GTID:2208360275483953Subject:Electronic Science and Technology
Abstract/Summary:PDF Full Text Request
With the development of the integrated circuits, conventional floating-gate memories will meet their bottle-neck effects when device dimensions scale down under 50nm, and can't satisfy the evolution request of future non-volatile memories. Floating-gate memories based on nanocrystals promise to enable long retention time with a further scaling of the tunnel oxide, by relying on Coulomb blockade effects in small semiconductor geometries and on the inherent characteristic of distributed charge storage. Demonstrate the advantages of nanocrystal memories in low voltage, low power consumption, small device size and high reliability by researching on the basic working principle, different charge injection mechanisms, memory characteristics and device fabrication. Nanocrystal memories are promising to replace conventional FG memories for these excellent characters.The device's physical model is founded and simulated by Athena and Atlas. We use Athena to simulate the process of building the cell structure and use Atlas to simulate the character of it to demonstrate the feasibility of the device.Various conditions which impact the performance of the device are researched. By comparing the simulating results of different programming mechanisms and device structures, this paper finds the proper parameters of the model.Two main memory arrays NOR and NAND are established and compared. Diversified disturb mechanisms in the array are studied and simulated based on the model invited in this paper, we draw the conclusion that nanocrystal memories possess high anti-disturbance ability.
Keywords/Search Tags:nanocrystals, non-volatile, charge injection, reliability, simulation
PDF Full Text Request
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