High-power Microwave Interaction With The Pn Junction Mechanism

With the development of science and technology, each kind of semiconductor device is widely applied in the radar system, such as the automatic control system, the communication system, the examination system and the sensory system. Because the high power ultra-wide band pulse radiation may enter the electronic system through the antenna, the craft slit, the service facilities hatchway, the vent, the power supply system, the wire and the electric cable and so on, thus causes the system to malfunction temporarily even collapse, and causes the inestimable losses. Therefore, the research of High Power Microwave (HPM) pulse acting on conductor component function effect, as well as acting on the working conductor component disturbance and the influence, has the vital significance.Being basic component of semiconductor device of electron system, PN junction is the first object for theory analysis and research.Firstly, this paper overviews HPM and PN junction, including the overview of HPM, the development of High Power Microwave Weapon (HPMW), and the principle and characters of PN junction. Also it analyses the physical mechanism and threshold of semiconductor device's burnout in environment of HPM, and makes out typical model.Then a new ameliorative algorithm was presented basing on the disadvantages of several common methods for solving the Poisson equation of PN junction. It combined Newton iterative method for solving nonlinear equations and SOR (Successive Over-Relaxation) method, which means weighted average between the two successive items in Newton iterative method. Finally the relaxation factor was revised to the best relaxation factor so as to improve the algorithm- better. The result of simulation software program shows that it keeps the high precision, speeds the process of convergence markedly and decreases the iteration times of computing significantly as well.Finally one-dimensional transient PN junction, static PN junction and its responsibility to HPM are numerically simulated. MATLAB7.0 is used to compute and simulate the semiconductor operation's equations, which are stiff coupled, nonlinear partial differential. The results conclude the concentration distribution of electron and hole, potential distribution and electric field distribution. So this paper gets the burnout mechanism of one-dimensional semiconductor device and its response to HPM theoretically.