Study Of High-power Microwave Effects On Microwave Front End

Microwave front-end, as a part of the wireless communication system, is a typical HPM "front door" target.The study of HPM effect on the device-level PIN limiter and LNA is more, but less reported in the component-level microwave front-end; Understand and grasp microwave front-end component-level HPM effect mechanism and regularity characteristics is of great significance for improving the ability of anti-destroying of microwave front-end electronic system.This thesis mainly carried out HPM effect theory and experimental research for microwave front-end which include PIN limiter and low noise amplifier(LNA). Firstly, the paper briefly introduces the research background and significance, and research situation at home and abroad; Secondly, according to the demand of the injection effect experiment,design and manufacture the experimental samples including the single-stage PIN limiter and multi-stage PIN limiter and microwave front-end; Thirdly, considering the self-heating effect of the device which caused by the action of itself power consumption by high power microwave pulse, by means of thermoelectricity analogy method, modeling of electro-thermal coupled circuit model is realized, and a uniform commercial software simulation environment for the electro-thermal coupling calculation of two physical process is come ture, thus establish component-level electro-thermal coupling effect circuit model for a multi-stage PIN limiter and microwave front-end including PIN limiter and LNA, and make a simulated calculation for HPM effect under many different microwave pulse parameters; Finally, The author build a L-band injection experiment system and carry out experimental research, to verify the simulated calculation results.The simulated calculation results show that the microwave pulse power and pulse width have large influence on the junction temperature, and the frequency and pulse rising time have less influence on junction temperature; junction temperature of pre-stage thick I layer PIN diode is higher than the post-stage thin I layer PIN diode with the increase of injected power and pulse width, so the thick I layer PIN diode is more susceptible to damage; The damage degree of multi-stage PIN limitier depends on the combination of different pulse form, the shorter the pulse interval, the greater the damage degree; the junction temperature regularity of the pre-stage PIN limiter of microwave front-end is similar to the PIN limiter alone, the relationship of power and pulse width which required to reach the same junction temperature conforms to the Wunsch-Bell rule; the measured results of input and output characteristics of multistage PIN limiter and small signal 3dB recovery time of microwave front-end are basically identical to the simulated calculation results which shows that based on the electrothermal self-consistent coupling model of circuit simulation method is effective.