Preparation Of Silicon-based Field Emission Triode Array And Optimization

Field emission cathode has broad prospect in the microwave tubes, flat panel display and sensors, which contains the properties of anti-radiation, the high speed response, large power, low noise, small size and low power consumption, which are suitable for mass production, and have integrated Advantages, so that field emission array transistor become a focus direction of all world. With growing maturity of the semiconductor integrated circuit technology, the high-density, strong emission current array of field emission has become a possibility. But for various semiconductor production technology and precision firing of different choices, there are also technical parameters and the differences in performance of the device. In order to possess the necessary preparation to launch of the transistor devices, the paper adopted a LaB₆-film transistor arrays as a research direction, mainly to do the following:1 .There are some research on the course of several important processes, such as lithography process, the etching process and thin film deposition. Then, several parameters on the device's preparation process and performance impact are given on the array of field emission.2.The main work of this paper is the silicon-based transistor arrays in the cavity etching process, and all kinds of conditions the results were compared to choose the appropriate parameters of success to a reasonable structure of the cavity field emission arrays.3.The process of that Mo tip arrays were deposited on a silicon-based cavity on which LaB6 films was coated was studied, and then transistor arrays field emission was processed through the Annealing Process which can generated array transistor with a low opened voltage and high emission current.4. After the research of the process of the packaging and testing of transistor array cathode, including tests of the circuit design and packaging technology of the same time, the measure results were used to a detailed comparative analysis and discussion.Through the above study, the field emission triode was successfully made in this paper where several important technology and process (such as lithography process, the etching process, thin film deposition process, etc.)of field emission arrays have been prepared; Focusing on the process of the cavity etching silicon-based technology and thin film deposition has made some of the relevant parameters of the experiment, and the measure of Mo tip array surface covered with the LaB₆ layer was obtained. The results showed that LaB₆ film deposition on the Mo tips better than the tip pure Mo tips array in the improvement in performance that the LaB₆ film coated tips were marked in the more low-voltage and greater emission current.