Field Emission Arrays Of Thin-film Design And Technology

Field emission devices can now be applied to flat panel display, microwave devices, field emission sensors, and other fields. This kind of devices applied to the cathode of electronic devices as microwave source is even more conspicuous than others. However, due to the current theory and technology constraints, the performance of field emission cathode is obtained at a certain degree of difficulty. Based on large-scale integrated circuit technology and the development of a wide range of potential applications in the development of high-performance field emission devices have certain feasibility. Thus, we have put forward a set of design options of field emission array which is consistent with experimental conditions.The structure design of film field emission (including the theoretical calculation, structural modeling, material selection and preparation process) on the practical application of the device is of great significance. In this paper LaB6 materials is selected for targets. There are four aspects of the study:1. The surface-state theory has been introduced; through perturbation theory in the condition that the potential cycle is terminated at the edge of the film, the surface wave equation is figured out to obtain the specific form of the surface state. And then, the formula of the surface state can be brought into the Schr(o|¨)dinger equation of field emission to calculate the electronic transmission probability expressions by WKB method. Through calculating the energy band and electronic transmission probability of the specific materials, the general law that the film field emission changes with surface state under ideal conditions can be observed. Initial implementation of the ideal formula for the situation described FN is given, and the films field emission mechanism of the microstructure is studied.2. The emission materials and electronic band structure of the property of the surface and interface as well as the nature are very important. The ratio of Boron and Lanthanum is about 6:1 and the energy band structure of crystals that have metallic material, and the Fermi-level electronic band can be added to provide sufficient voltage electronic.3. Through the establishment of multi-level array simplified model, considering electronic space charge effects, using a numerical difference method is used to simulate the field emission arrays with micro-aperture. The results are consistent with the actual numerical simulation, which can offer optimization of the structure for the late pilot provide design basis.4. The success of manufacturing a large area of the field emission arrays is based on semiconductor integration process, and the silicon wafer processing. At the same time, the array with thin film deposition LaB6, can improve the launch of performance field emission of a diode. Then, we can detail analysis of the impact of the reasons for the film launch. The results show that thin film with deposition of LaB6 in the diode can markedly improve the emission properties compared with pure silicon tip. Therefore, LaB6 for thin film materials, applied in the large areas of field emission diode arrays is produced successfully, and then given analysis and testing.