Zns Fluorescent Film Pulsed Laser Deposition And Its Characteristics

Field emission display (FED) was given much attention by many researchers for its advantages such as high luminance, thin structure, low power consumption, and high visual property. To make high quality of FED, not only superior cathode but also matching fluorescent anode and advanced sealed vacuum technique are needed.To optimize anode of FED, ZnS luminescent thin films were prepared at an Ar atmosphere using YAG laser (1064nm) and pulsed XeCl (308nm) laser assisted with a 13.56-MHz radio frequency (RF) plasma, through varying the laser pulse energy density, radio frequency (RF) and pressure of deposited chamber, deposited temperature, target to substrate distance, laser repetition rate. We also studied the films by annealing. X-ray diffraction (XRD), scanning electron microscope (SEM), and atomic force microscope (AFM) were employed to characterize the structure, morphology of samples. Photoluminescence (PL) and cathode-luminescence (CL) characteristics of these thin films were studied by fluorescence spectrophotometer and light intensity meter, respectively. The relations between the luminescence of ZnS thin films and their character including crystal structure, composition, the films thickness, etc. were investigated. It was conclusion that the optimized conditions were low laser pulse energy density, Ar atmosphere plasma assisted by RF, deposited temperature of 200℃, the distance of 5cm between target and substrate, and the laser repetition rate of 3Hz.Furthermore, we also prepared ZnO/ZnS double thin films to improve luminescence performance. It is indicated that the luminescence intensity of ZnO/ZnS double thin films was better than ZnS thin films, but it will need to be studied.