Third-mm Low-noise Amplifier And Switch Components Study

Solid state millimeter amplifier and switch are the key components of millimeter wave transmitting and receiving systems. The W-band low noise amplifier and switch what designed in this paper promote the local research of millimeter wave system towards higher frequency.At the beginning of this paper, the research background of millimeter wave amplifier and switch is given. Secondly, the system precept designed for the required targets is shown.The second chapter gives detail introduction about analysis and design of several kinds of transitions between microwave guide and micro strip, which are used in this project. This chapter also depicts the processing and testing of designed circuits as well as the design of source-free circuit, which does a good preparation for the future design of the whole system circuit.Theory of millimeter wave amplifier is firstly introduced in the third chapter. After that, the design of low noise amplifier is given, which is based on the choosing of single chip amplifier, the implementation of circuits, the estimation of performance indicators, the design of bias circuit as well as cavities and so on. The testing result show that the global gain is up to 30 dB in the frequency 90～100GHz, and the P_ldB is more than 12.3dBm, which meets the performance requirement. At the end of this chapter, performance optimization schemes are given.After the design of the amplifier, the W band SPST based on the beam lead PIN diode is given in the forth chapter. During the 3D software analysis within the whole band, the impact of the extraneous parameters of PIN diode and the leakage of crevice energy during the assembly of fin line circuits are take into consideration to enhance the simulation accuracy. Testing results show that the insertion loss is lower than 2.2dB, the isolation is higher than 14.5dB, and the SWR is less than 2 from 90GHz to 100GHz.Based on the design method introduced in chapter 3 and chapter 4, the V band switch-amplifier-filter component is developed, which basically meets the required performance indicators. But the insertion loss of SPDT does not match the requirement very well, so further optimizations towards the design schemes are needed, which includes the optimizations of the structure of the circuits, the welding position of PIN diode and the tube spacing.