Cantilever Mosfet Hall Magnetic Sensor Research

Hall sensor is one of the most mature and widely used magnetic sensors. It can be used to measure not only magnetic field, but current, velocity, position, angle and rotate speed, plays an important role in precisely measure, industrial control, automotive electronics, home electrical products and so on. In this paper, a MOSFET Hall magnetic sensor has been designed and fabricated on the cantilever beam. The source and drain of MOSFET is the current control pole, the current between source and drain IDS is controlling current, two Hall poles are placed by the two sides of gate and nearby the drain, with the action of vertical magnetic field, Hall output voltage VH is produced on the Hall output poles. When the intensity of magnetic field is changed, the output voltage is also changed.Based on the related research of Hall magnetic sensor at home and abroad, this paper introduced the basic principle of Hall-effect, work principle of MOSFET Hall device, the structure and the fabrication process of MOSFET Hall magnetic sensor on the micro cantilever beam are also designed. We also simulated the fabrication process to afford credible technique pledge for the actual process of device. Using the Multisim software, the amplified circuit is simulated and debugged practically. During the experiment, the characteristic of sensor is tested and analyzed, after that the linearity, lag, repeatability, sensitivity and precision are calculated. The linearity of sensor is±0.0384%F·S, the lag is±0.0092%F·S, the repeatability is±0.072%F·S, the sensitivity is1.212 mV T, the precision is 0.0821%F·S.It is proved that the design scheme is feasible to manufacture MOSFET Hall magnetic sensor with the structure of micro cantilever beam. It's testing equipment is simple, signal disposal is convenient, the process can be compatible to IC technology and can be realized the integration of Hall sensor.