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Hall Phase Sensor Components And Related Key Technologies

Posted on:2003-02-04Degree:DoctorType:Dissertation
Country:ChinaCandidate:S J HuFull Text:PDF
GTID:1118360092481712Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
The Hall sensor is one of the most mature and widely used magnetic sensors. As we all know, it can be used to measure not only magnetic field, but current, velocity, position, angle and rotate speed. As a key component, Hall sensors are wide playing role in precisely measure, industrial control, automotive electronics, home electrical products and so on. The study in this thesis is part of the project "the research and development on automotive phase sensors" supported by the Science and Technology Fund of Shanghai Automobile Industry. In this thesis, we pay attention to some basic techniques on Hall vane sensors, namely automotive phase sensors, and the development of integrated Hall switches.First, Hall effect principle and Hall-effect performance of some semiconductors are introduced here. We also introduce some high-performance Hall elements and some none-plate-like Hall magnetic sensors. By tracing the development of the offset voltage cancellation technology, we elaborate the development of the integrated Hall sensors and some newly progresses.Second, some kinds of Hall plates are taken into account. By applying Schwarz-Christoffel transformations, The geometrical correct factor and the aspect ratio of Hall plates with four equal edge contacts of none-zero length, witch are in variant for a rotation through 90? are computed. A series of octagon Hall plates are fabricated by GaAs depletion MESFET process. The test shows good performance of these Hall plates and proves the computation result. The computation method and results is helpful to Hall plates design in Hall 1C.Third, the circuit configuration and design principle of Hall 1C fabricated in Si bipolar process were considered. Through analyzing and simulation, we understand the basic design technology of integrated Hall switches. As a result, we designed the layout of a Si bipolar integrated Hall switch. For the first time, an integrated Hall switch based on GaAs MESFET process was fabricated. Through test, the switch showed a quite good performance and reasonable work points. Furthermore, the hall plate and amplifieralso formed a linear Hall sensor with high sensitivity.Finally, the Hall vane sensor was designed and simulated with FEA Software ANSYS in this thesis. The static and dynamic simulation methods were established and proved to be accurate enough by simulating Honeywell 2AV series Hall vane sensors. Through Substituting Srr^Con permanent magnet for AINiCoS permanent magnet in the AINiCo Hall device, then revising and optimizing it, we got a new highly precise Hall vane sensor which had the same performance as the original one and lower cost. The simulation method is very instructive to the production of the Hall vane sensors.In conclusion, some important studies on Hall sensors have been made. These works would be helpful to the development of Hall sensors.
Keywords/Search Tags:Hall effect, Hall sensor, GaAs, MESFET
PDF Full Text Request
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