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Spectroscopy Of The Plasma Temperature Of The Semiconductor Bridge Diagnostic Studies

Posted on:2008-12-06Degree:MasterType:Thesis
Country:ChinaCandidate:R WuFull Text:PDF
GTID:2208360215997987Subject:Applied Chemistry
Abstract/Summary:PDF Full Text Request
Based on the atomic emission spectroscopy principle, a set of plasma diagnosticsystem was established and firstly used in the measurement of SCB plasma temperature.The experimental results provided the research of ignition and detonation mechanism withtheoretical and experimental basis. The main contents of the paper were summarized asfollow:Firstly, by observing the SCB microstructure, surface morphology, as well asphotoelectric tests on combustion of SCB, the semiconductor plasma formation processwas probed to. With using of high-resolution camera ICCD, the dynamic change of plasmahad been recorded to work out the spatial scale. The maximum size of the spatial scale wasabout 2mm.Secondly, research had been made on the emission spectroscopy of the SCB plasmabetween 350nm and 650nm. Based on the principle of spectral lines choice, two suitableatomic spectral lines, CuI510.5nm and CuI521.8nm, were chosen to build up a temperaturemeasurement system. The response time of this system was short. And the time resolutionof the system was up to 10ns.Thirdly, a multi-channel high-speed dynamic storage oscilloscope was used to recordthe intensity of the two emission spectrum lines and the changes of the electric current andthe voltage of SCB. The temperature properties of three kinds of SCB plasma have beenobserved under various discharge conditions. The results showed that the higher thedischarge voltage or charge capacitor was, the higher the temperature of the plasma was,and the longer plasma discharge time was. There was a late discharge when the inputenergy reached the critical value. The greater the capacitance or voltage was, the earlier thelate discharge of the plasma was. The temperature changes of plasma at the beginning of alate discharge were not significant under different discharge conditions. Each SCB had itstemperature range respectively.At last, in pulsed discharge, the influences of voltage and capacitance changes on theplasma temperature had been studied. And the relation between the plasma temperatureand discharge voltage had been researched under both pulse discharge and DC discharge.
Keywords/Search Tags:Semiconductor Bridge (SCB), Plasma, Temperature, Space Dimensions, Atomic Emission Spectroscopy, Double Line Method
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