Preparation And Luminescence Properties Of The Silicon Oxide Films Containing Nano-silicon

The material of optoelectronic information is one of the extremely greatest concerns of the material. Optoelectronic integrated devices take the most important effect. Silicon horizontal integration processes are very mature. Considering the compatibility of the technics, taking silicon material as the luminescence devices will be the perfect selection. But the most important things are how to improve the efficiency of the luminescence. Bulk silicon has an indirect energy bandage and is therefore highly inefficient as a light source. It is hard to get the goal of luminescence devices. Nanocrystalline silion (nc-Si) have many difference from bulk silicon, such as structure, the capability of optics and photoelectricity. It shows high potential on light-emitting devices, photodetector, optoelectronic devices and sensor.Si-rich silica was deposited by RF magnetron sputtering and the film dopped with aluminium is deposited too. Flowing the annealing in the stove, we get the auto-assemble the nc-Si particles. The film was studied by Raman scattering, X-ray diffraction, SEM, FTIR and XPS. We analyze the spectrum of absorption.The emphasis of the article is to study the spectrum of photoluminescence and electroluminescence. The photoluminescence spectra were found to have the peak at 360nm and 675nm. We discuss the exciting spectrum and luminescence center separately. We take ITO as the underlay material. Few people take this underlay material at present. Although it is transparent, it can't provide the cavity. We can observe the light from the ITO at dark and it can be observed repetitious. We discuss its luminescence plain.