Hydrogenated Polysilicon Tft

Poly-crystallization silicon thin film transistor (p-Si TFT) addressing liquid crystal display has been currently the research and development focus in the field of flat panel displays, as it is most feasible approach to high resolution, high integration and low power consumption as a result of its high aperture ration. There are less number interface of the crystal grain,lower metal impurity and higher mobility in the electric current director, the MILC P-Si TFT has been the research focus in the fields of AMLCD, projection display, OLED etc.There are vast dangling bonds and bug. they form high-density trap. Carrier will be capture by trap, the number of electric carrier will decrease. The trap hold back carrier to move from crystal to other crystal. It influences the electrical properties of TFT. We can lessen the dangling bonds and bug in order to improve the Ion/Ioff,Vth by hydrogenation.In general, hydrogenation is prepared after completing of TFT, in this way, we need more radio frequency power and time, so the cost of hydrogenation will raise. In this experiment, we prepare hydrogenation by PECVD after deposition of silicon nitride thin film for gate insulator of TFT. In this way, parameters are prone to control, and hydrogenation ion will not escape without high temperature.In the process of hydrogenation by PECVD. Hydrogenation parameters strongly influence the properties of hydrogenation. The key hydrogenation parameters are radio frequency power, reactant gas ration, temperature, time. The motive of this paper is to investigate the relationship between hydrogenation parameters and its properties in order to prepare excellent TFT. We prepare some TFT and test their Ion/Ioff,Vth. By analyzing the data and phenomena of experimentation,The influence of Hydroge- nation parameters on the electrical properties of TFT is systematically discussed. At last ,TFT with excellent electrical properties is prepared under the relatively optimum parameters.