| As an important electronic material in energy-information industry, poly-silicon thin film are widely used in LSI and semiconductor discrete devices because of its excellent photoelectric characteristics and low-cost of preparation. Poly-silicon thin film solar cells as a new generation of non-pollution civil solar cells.In order to low down its cost, many technologies have been developed to prepare the poly-silicon thin film in low temperature. However, each technology has some unfavorable factors for industrialized manufacture processes. ECR-PECVD is the most effective way for mass-production in that the films it prepared have high quality, the technique it used is mature, and the conventional ECR-PECVD system itself is quite fit for mass-production. SiH4 is similar to SiF4 in structure and property, and it is a cheaper, safer raw material in industry to low down the cost of the productions more effectively in comparison with SiF4. Based on the above, we attempt to deposit the poly-silicon films directly, using SiH4/H2, in conventional radio frequency glow discharge ECR-PECVD system, on the glass and the silicon substrates respectively, in order to find out the process technique for mass-production.We discover that poly-silicon thin films can be gained when the substrate temperature is 500℃, which has not been reported yet at home and abroad. Before depositing, how washing time and H2 flow of H2 plasma had greater influence. Through compares with other response gas, we prepare the polycrystalline silicon thin films does not contain the impurity.Compared with other reactive gas sources, we believe that: (a) ECR can make the substrate temperature lower. (b) it is the in-situ chemical cleaning and etching effect and the pre-treatment to the substrate by H element that promotes the crystallization of the 0thin-film, (c) when we take Ar into reaction, it can enhance the discharge, (d) in the stage of the deposition, the crystallization rests mainly rests mainly with the space... |
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