Monolithic Oeics Optical Devices, Laser Microfabrication Developed

The fabrication of monolithic optoelectronic integrated circuits (OEICs) isconfronted with the incompatibility problem between optoelectronic and electroniccomponents. Though enormous efforts have been made to overcome this difficulty,the problem has not been solved perfectly. Laser assisted microprocessing ofsemiconductors has the advantages of "low temperture processing"and "directwriting". It is promising to use this technology in the fabrication of OEICs to solvethe incompatibility problem.The purpose of this work is to develop the laser microprocessing technologies forthe fabrication of monolithic OEICs. The main conclusions include:1) Some precise alignment technologies in the laser assisted microprocessing are proposed.a) The requirement of focusing is very stringent in the temperature measurement of the laser-processed region. A effective focusing method has been proposed to solve this problem.b) A method has been proposed to realize the precise alignment between the small invisible laser spot and the diffusion window.c) The alignment between the diffusion window and the etching area in the second ion mass spectrometry analysing has also been realized.2) A computer-controllded temperature measurement system for the small region in laser assisted microprocessing has been developed.3) In laser-induced diffusion, the diffusion coefficient D varies exponential with temperature T, and so, a small change of temperature T will cause the enormous variation of diffusion coefficient D, then influence the impurity concentration distribution and the performance of p-n junction. In experiment, the effects of focusing state on the measurement accuracy of radiometric pyrometer have been analyzed. The smaller area the high temperature region has, the greater influence of the measurement precision. In the article, the effects of focusing state on the measurement precision of radiometric pyrometer have been analyzed, the focusing technology in radiometric temperature measurement for small laser-processed region were presented.4) Using SIMS, the measure method of impurity concentration distribution of diffused...