Some Properties Of Insb Magnetoresistive Photoelectric Sensor And Its Microscopic Mechanism

As a measurement device,the sensor can feel , respond and transform the measured thing which was provided into the useful outputted signal so as to change process memory record display and control the information. Magnetic sensors are an important branch that can be used to detect the non-electronically characteristics through the magnetic field. The InSb magnetoresistance photoelectric sensor in this paper is designed for the fine measurement of the photosignal of the luminant device. Through the sensor,the photo-pulse signal is changed to electric pulse which can provides to other second instruments.Firstly, the paper introduces the theory of the InSb magnetosensitive characteristics. And then analyzes in detail about the running principle of the InSb magnetoresistance photoelectric sensor. Design the good-working signal processing circuit of the sensor, including the signal collecting circuit of three output polars the coupling circuit using capacitance and resistance the alternating amplify processing circuit and the stabilization voltage supply circuit. Analyze partial character and microcosmic machanism of the InSb magnetoresistance photoelectric sensor,which indicated that:1 The average distribution of the nonequilibrium carriers which are appear in the InSb magnetoresistance photoelectric sensor because of the light is (△p) = fτ ,bystuding which we can know that the less reflection coefficient the more permanent carriers' life and the thinner thickness of the InSb magnetoresistance should be selected to make the sensor have better measurement;and this kind of sensor can gain better result when measuring the photo -pulse signal that the wavelength is equal to or less of the 6888nm than other wavelength signals.2 Under the effect of the electric field,a group of nonequilibriun carriers that the moving speed is E andthe moving direction is along the direction of the electic field appear when a photo-pulse finishes.In the course of the experiment,groups of the nonequilibriun carriers appear with the continuous photo-pulse carrying.3 Explain the reason why the outputed voltage increases several times with the magnet field than without the magnet field;and analyze the phenomenon that the changing trend of the outputted voltage is square-curve shape with the change of the magnet field when thephoto-pulse frequency fixed.4 Analyze the phenomenon that a biggest figure of the outputted voltage will appear with the change of the photo-pulse frequency when the magnetfield fixed.5 The component in the sensor should be appropriately selected to make the magnet field equal to the best magnet field that the sensor can adapted and make the best photo-pulse frequency adapted for the sensor equal to the photo-pulse signal to be measured so as to gain the aim of excellent measuring effect when making the InSb magnetoresistance photoelectric sensor.