Study On The Growth And Properties Of Indium Antimonide(InSb) And Indium Iodide(InI) Crystal Based On Vertical Bridgman Method

The use of semiconductor detectors as radiation detection media began in the 1960 s due to its high energy resolution,short pulse rise time,small size and wide linear range,resulting that the fine structures of many complex power spectra have been well researched and widely used in a variety of radiation detection fields.Two compounds,namely,Indium antimonide(In Sb)and indium iodide(In I),were taken as the research objects of the topic,vertical Bridgman method was adopted for the growing of In Sb and InI monocrystallines,and characterization and analysis were made on the quality and property of InSb and InI monocrystallines,so as to establish a good material basis for future development and application of semiconductor detectors.Firstly,the research background of compound semiconductor materials and detectors were introduced,then the research status of InSb and In I semiconductor materials were described,and finally the purpose and significance of this paper were represented.Secondly,several common crystal growth technologies were introduced,then several common defects in crystal growth process were briefly introduced,which provided theoretical guidance for the next experimental part.Furthermore,InSb single crystal was prepared with the vertical Bridgman method,a technological parameter suitable for InSb growth was found,and InSb single crystal was obtained by cutting,grinding and polishing.The crystal lattice structure,morphology and components,band gap energy and specific resistance were characterized in detail with such instruments as X-ray powder diffractometer,scanning electron microscope-X-ray energy dispersive spectrometer,ultraviolet-visible absorption spectrometry and resistivity tester.Finally,In I single crystal was grown with the vertical Bridgman method for the first time in China,InI single crystal wafer was obtained through processing,and tests and analyses were conducted on the crystal structure,morphology,components and electrical property of the In I single crystal wafer with X-ray powder diffractometer,scanning electron microscope-X-ray energy dispersive spectrometer,ultraviolet-visible absorption spectrometry,atomic force microscope and resistivity tester.