High-range Micromachined Piezoresistive Acceleration Sensor

Name: Quanping Huang (Microelectronics and Solid State Electronics) Directed by Prof. Deren LuHigh g micromachined piezoresistive accelerometers can be widely used for the impact test and military fusee. High g micromachined piezoresistive accelerometers usually need wider bandwidth than the low range piezoresistive accelerometers, for example, the highest load acceleration of these sensors can arrive at the 100,000g, the sensitivity is 0.2 0.4 V/gv, and the installation frequency can reach the magnitude of MHz.In this paper, the introduction of the MEMS technology and some useful MEMS devices were widely discussed in the first chapter.In chapter 2, the breaking strength of the crystalline silicon was studied through the micro force-displacement balance. And some conclusions were obtained that can be used for the high g piezoresistive accelerometer's design.In chapter 3, the mechanism, static and dynamic characters of the piezoresistive accelerometer with the double thin plates-mass. And the simulation of ANSYS was used for the optimal design of this sensor and obtained the parameters of the structure.In chapter 4, layout design of sensors' chip and the process was elaborated. And the process of the frame was expounded.In chapter 5, the static and dynamic testing of high g piezoresistive accelerometers were elaborated. The experiment of falling bar and Hopkinson bar were carried out, useful conclusions were made, and good datum was obtained.In chapter 6, based on the results of chapter 5, some improved schemes were put forward, and designed a new structure. The performance of the new structure would be improved greatly.