Lsi Silicon Dioxide Dielectric Chemical Mechanical Polishing

CMP is the result of the semiconductor industry抯 needs to fabricate multilevel interconnections for increasingly complex, dense and miniaturized devices and circuits. Now, CMP has been regarded as the unique technology to meet the need of global planarization. Because of the complex of CMP, the mechanism has not been known deeply. The most mechanism is the results of experiences. Moreover, CMP has many challenges, such as: surface scratch, metal ions contamination and particle adsorption, etc. In this paper, the subject of silica dielectric CMP has been studied. The slurry and the polishing conditions -have been studied through a large of experiences, the mechanisms of oxide CMP has been discussed systematically , and some conclusions including choice of components of the slurry and the optimal conditions have been reached, and the mechanism of Si02 CMP has been researched deeply. As a result , a new route which has the characteristics of high-rate, high- uniformity and small abrasive size has been established, and the problem of surface scratch, metallic ions contamination and particle adsorption have been resolved effectively. Researches of this subject will improve the technology and advance the development of IC industry.