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Laser planarization of multilevel interconnects

Posted on:1992-09-16Degree:Ph.DType:Dissertation
University:Stanford UniversityCandidate:Weisberg, Andrew HarlanFull Text:PDF
GTID:1478390014999509Subject:Engineering
Abstract/Summary:
Laser Planarization allows microfabrication of many levels of interconnection at wiring pitches from 500 to over 5000 per inch. Gold wires with thickness between 0.7 and 5 microns can be made sufficiently planar for multilayer VLSIC and SiPCB applications. Process flatness, roughness, and thermal tolerances are compatible with conventional semiconductor processing techniques.;Planarization with fluence below a threshold value (0.5 to 10 Joules/cm;Real-time measurements of temperature are fit within ;A model for liquid-metal-flow transients assumes linearity but retains time- and temperature-dependence. This model is solved for all materials and geometries in terms of dimensionless groups. Real-time diffraction experiments are demonstrated, providing a way to observe the flow transient. Thermal and flow transient models are recombined in an overall process model that predicts process performance with a spatial filter acting on topography.;Novel techniques allow confirmation of thermophysical models and determination of uncertain thin film properties. Many unfamiliar phenomena encountered present new frontiers for Fluid Mechanics, Microfabrication, Chemistry, and Materials Science.
Keywords/Search Tags:Planarization
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