The Study Of The CMP Technology Of SiO₂ ILD In ULSI

As the 1C technology develops at very fast speed, the degree of integration is higher and higher and the feature size is smaller and smaller. The structures become solid, and multilayer. Thus, the request of surface quality between the layers is stricter, especially the flat of the surface. The traditional skills are not able to satisfy this request, but the CMP technology can not only satisfy this request but also reduce the defects. It can advance the sheath fluting precision by way of the elevation of the surface flat. Then, it achieves the aims that reducing the feature size and increasing the integration degree.The most applied CMP technology is the ILD CMP. And the most applied ILD is SiO2. So, the study of the SiO2 CMP is one of the emphases. Our task chooses the SiC>2 CMP as the study direction. We use the CeOj as the abrade aim at the high polishing rate of it. We have investigated the slurry's making deeply by great deal of experiments. We have solve the problem of nick that caused by shattered CeO2 abrasive. We have adjusted the technics parameter and discussed the mechanism of CMP deeply. The work of this task must accelerate the sizable application of CMP and promote the development of the 1C industry.