Multi-Band High Efficiency Power Amplifier |
Posted on:2012-04-18 | Degree:M.S | Type:Thesis |
University:University of California, San Diego | Candidate:Besprozvanny, Randy-Alexander Randolph | Full Text:PDF |
GTID:2458390008490601 | Subject:Engineering |
Abstract/Summary: | |
Achieving high efficiency power amplification over multi-octave RF bandwidths pose many design challenges. Conventional design techniques do not support high efficiency operation since use of distributed matching circuits and/or multiplexing several power amplifiers incur nonoptimal matching environments or high output losses. A new design approach is discussed whereby using the latest Gallium Nitride transistor technology and leveraging a Class E circuit environment, multiple electronically switched output networks are provided to the RF transistor providing high efficiency operation over multi-octave RF bandwidths. Two electronic switching elements are considered including PIN diodes and RF transistors. Using commercially available components, measurements are conducted on a physical prototype using PIN diode switch elements demonstrating typical efficiencies of 50% over two octaves bandwidth and at frequencies up to 2.4GHz. |
Keywords/Search Tags: | High efficiency, Multi-octave RF, RF bandwidths, Over multi-octave |
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