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Parallel Test Of The Cmos Image Sensor Development

Posted on:2012-02-03Degree:MasterType:Thesis
Country:ChinaCandidate:H H HuangFull Text:PDF
GTID:2208330335497809Subject:IC Engineering
Abstract/Summary:PDF Full Text Request
The Image sensor is a device which can convert optical information into electrical signal. CCD (charge coupled device) and CMOS (com-plementary metal oxide semiconductor) image sensors are two types of the Image sensor and with different technologies for capturing images digitally. CMOS image sensor can be integrated with control circuit, while CCD can not do this.CMOS image sensors are more widely used than CCD in the market.And more companies pay high attention to the cost of the CMOS image sensor-fabrication. The testing of the CMOS image sensors is different from other logic devices.It needs optical testing. So the CMOS image sensors need light source and capture modules when doing the chip test. It's extra cost for CMOS image sensors.This thesis is focus on how to cost down the the CMOS image sensors wafer-level testing by using parallel testing. This will reduce the testing time. We also need to choose the right Automatic Test Equipment and multi-site probe card for the low cost testing.
Keywords/Search Tags:CMOS image sensor, chip test, image capture, probe card design
PDF Full Text Request
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