Research On Non-Vitality Semiconductor Memory Technology

As the high-speed development of integrated circuits in integration density and performance, it requires high-performance semiconductor memory, especially in SOC systems. The pursuit of high-capacity, high-performance, high-density and low power consumption of semiconductor memory makes memory related circuit design engineer must face tremendous pressure. In this paper, we introduce a new self-developed non-volatile semiconductor memory process, use its OTP (One-Time Programmable Memory, OTP) memory cell to develop a 32M OTP non-volatile semiconductor memory chip and do some research on memory related integrated circuit design methodology. Finally, we complete an OTP semiconductor memory chip which has 32M capacity,8bits data width,22-bits address bus,60ns access time.In this paper, we design this non-volatile memory chip in system level, module level, circuit level and physical level. We first research the characteristics of the OTP memory cell. Then according to the feature of the OTP memory cell arrays and memory cell, we determine the specifications and the modules of the chip. Finally, we design the various modules of the chip and finish the layout of each module.In this paper, a novel high-density address decoder architecture is proposed to avoid memory array's lateral conducting current in reading and programming mode. In order to enhance the system's reliability in circuit level, a double reference line sense amplifier is conceived to improve the access time while not decreasing the accuracy of the sense amplifier. Then, other function modules such as power management module, ATD module, control-logic module and so on are implemented.According to the methods of floorplanning and routing, each analog module is being optimized in physical implementation, this improve the memory density, increase the utilization of the chip. The digital modules are built using simple standard cell library via circuit synthesizing and auto floorplanning and routing. Good physical design methods enhance the performance of the chip.Post-simulation results show that this chip has the same performance compare to other countries under similar memory cell process. The research results of this paper have good application in non-volatile semiconductor memory.