Research And Design Of Efuse In 0.13μm CMOS Technology

The manufacturing processe of traditional is not compatible with the current standard CMOS logic manufacturing processes,which has become an important issue restricting the development of integrated circuits. Therefore, instead of traditional metal fuses, efuse become a research hotspot in the field.This paper describes the working principle of electronic programmable fuse, and analyze the relevant factors that affect its performance and reliability.Three efuse external circuit were designed; And on this basis, the overall and the key circuits have beed simulated to verify their parameters; Finally based on SMIC 0.13μm standard CMOS technology ,we designed layout of related circuits and tape out for test.The reliability of efuse and the performance of effuse circuits are tested after chips taped-out. The results show that, the efuse in the HTS test fail bits rate is 150PPM (225oC, 250hrs); DTC test fail bits rate is only 3PPM (-65oC~150oC, 500 cycles) and has a temperature voltage characteristics. The results also indicate that, the first effuse circuit is the final choice among the three kinds of peripheral circuits of effuse. When compiling conditions are 3.3V and 1μs, all the resistance of efuse above 10K?, while at 3.63V and 1μs, the resistance reach more than 50K?.