Design Of 808nm Tapered Semiconductor Lasers

The application of high power semiconductor laser is more and more popular both in military field and civil using.Firstly,we introduce the principle of quantum-well semiconductor laser, analyze the tapered semiconductor lasers in theory by wave equation, complex effective refractive index, rate equation, in terms of thermal characteristics. Secondly, we design the epitaxial structure of semiconductor lasers based on theoretical analysis. According to the structure of lasers epitaxial wafer, the structure of tapered semiconductor laser is designed, including the flowing parameters, such as the length and height of the ridge waveguide, the length of tapered gain region, the depth and breadth of the restraining optical feedback groove.Then,we complete the fabrication of the device, and the properties of the device are tested.The lasing wavelength of the device is in 800nm wavelength region, the threshold current is 500mA, when the input current is 2A, the output power of device reach to lW,the slope efficiency is 0.63W/A.Finally, the method to describe the semiconductor laser beam quality evaluation is introduced, and the packaged device is tested, the beam quality factor of tapered semiconductor laser is 2.3.