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Study On High Power 980nm Ridge Quantum Well Semiconductor Lasers

Posted on:2009-03-13Degree:MasterType:Thesis
Country:ChinaCandidate:S Y ZhangFull Text:PDF
GTID:2178360242975047Subject:Physical Electronics
Abstract/Summary:PDF Full Text Request
Because of 980nm ridge quantum well lasers used as pumped sources of EDFA and applied widely in communication,military and medicine,they have become a focus of industrialization and be paid great attention to.Application potential,major progress of high power,high beam quality 980nm semiconductor lasers are first introduced,then summarization and analysis on the main research content and key technologies of high power 980nm semiconductor lasers are made out.Based on the above,the overall optimization designs on ridge quantum well laser structure and a lot of experiment research for the MBE growth of 980nm wavelength ridge QW laser materials are carried out.The slope efficiency is 0.89W/A,horizontal divergence angle is 9?,vertical divergence angle is 28?.Under the width of 3um,the cavity length of 750um and the temperature of 25℃,the threshold current of the high beam quality 980nm ridge quantum well semiconductor lasers is 17mA,70mW continuous output power under the current is 100mA.
Keywords/Search Tags:980nm ridge quantum well lasers, high power, high beam quality, MBE, large optical cavity
PDF Full Text Request
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