The Study On Characteristics Of Radiation In Ultra Deep Submicron Devices And Modeling

As the development of the space electronics technology, the relations between space environment and electronics technology become more and more close. Radiation could induce the performance of the device and circuit degradation, even drastically failure. Total ionizing dose effect is one of the important radiation effects which could induce the degradation of the device performance.This thesis mainly focuses on the experimental study of total ionizing dose effect of the CMOS devices in ultra deep submicron dimension. The experimental results show that edgeless-gate devices have good radiation performance. But for the vertical-gate NMOSFET. the total ionizing dose effect will affect the DC characteristics, which lead to the increasing of the off-state leakage current and static power.A total ionizing dose effect model in vertical-gate NMOSFET is proposed, which takes into account the impact of the non-uniform distribution of interface states, the substrate doping profile, the trapped charge distribution, the angle of STI region and the junction depth of source/drain. The radiation characteristics of many circuit modules are predicted by the new model, which include resistor-loaded inverter, loop oscillator, on-off circuit and pass gate. The predicting results show that total ionizing dose effect will not lead logical errors to the combined logic circuits but increase their static power, while total ionizing dose effect will affect the on-off circuit seriously, even drastically failure.An edgeless-gate-devices model is proposed, which is implemented into commercial model BSIM3V3 to predict the characteristics of many circuits. The model is modified by experimental results, and the error is less than 10%.