Modeling And Simulation On Metal Organic Vapor Deposition Reactor

MOCVD (Metal Organic Chemical Vapor Deposition) is one of the most promising technologies to fabricate semiconductor device, metal thin film, metal dioxide and the nitride semiconductor. It is widely used in the LED, Laser, High power transistor and Solar cells based the nitride semiconductor. Among the MOCVD components, the MOCVD reactor design is the key factor to guarantee the requirement on the quality and uniformity on the thin film.First, the development of MOCVD in domestic and abroad was briefly introduced. The components of the basic MOCVD system were described. A new novel MOCVD reactor chamber was proposed combined with the two typical common reactors, the vertical reactor and the horizontal reactor.Second, a multi-physical model was modeled to govern the behavior of the reactants in the MOCVD reactor chamber based on the basal fluid dynamics, heat transfer and the chemical reaction of gas phase and surface. The Finite Element Method was employed to solve the governor equation. The model validation was conducted based on the experiments from the references.In the end, utilizing the model, a 2D axial symmetry model of the Buffered Distributed Spray reactor was built. The related governing equations of the multi-physical field were solved by a commercial code. The direct growth rate was obtained through the simulation and optimization was done by optimizing the geometry parameters and the boundary conditions. The period and cost of design was cut down after applied the modeling and simulation.