GaAs/InP And Si/GaAs Heteroepitaxy And Their Applications In Integrated Optoelectronic Devices

The increasing demand for communication is the driving force behind modern fiber communication systems,which is always based on novel optoelectronic devices.It is the revolutionary period that independent optoelectronic devices are changing into integrated devices,but this revolution has been encountered by several challenges,such as the compatibilities of semiconductor materials,structures and processes.In this thesis we summed up the heteroepitaxy technology of large mismatched materials,and the other main research work is listed below:1.Important progress has been achieved on GaAs/InP heteroepitaxy.The optimum conditions of low temperature InP buffer layer has been obtained.Based on these methods,high quality InP epilayer has been grown on GaAs substrates by using low pressure metalorganic chemical vapor deposition(LP-MOCVD).2.The monolithically integrated long wavelength resonant-cavity -enhanced photodetector has been realized,by using heteroepitaxy growth between InP-InGaAs-InP p-i-n structure and GaAs/AlAs distributed Bragg reflectors(DBR).High quality heterepitaxy was realized by two-step growth.An external quantum efficiency of 67.3%at 1549.4 nm was obtained in the device with an InGaAs absorption layer thickness of 200 nm.3.Important progress has been achieved on Si/GaAs heteroepitaxy. High-quality GaAs epilayer is obtained by employing the technologies of the tilted Si substrate,optimization the low temperature AlGaAs buffer layer and thermal cycle annealing.Also,a method of GaAs epilayer grown on mid-patterned Si subatrates has been demonstrated.