Study The Modulator Approaches Of Work Function Of Semiconductor Material With Nanostructure By Built-in Electric Field

This thesis started with semiconductor materials and the energy band structure , and based on the meso-photoelectric effect, which is the extended effect mechanism of meso-piezoresistance, we analyzed the producing mechanism of built-in electric field in detail, including the built-in electric field that generated from the PN junction,piezoelectric field of crystals and the spontaneous polarization of ferroelectrics.Firstly,the paper studied the work function modulation conditions of semiconductor material with nanostructure, introduced the Fermi energy of semiconductor in distinctly and drew the simplified representation of Fermi energy.Secondly, we designed two asymmetric barriers and wells, through simulating the changing profile of transmission coefficient with the electron energy; we analyzed the influence of built-in electric field to the transmission coefficient with bias voltage under the asymmetric condition. Further more, experimentally, we test the influence of built-in electric field on the quantum energy of semiconductor material with nanostructure on different orientations of crystal with under applied stress.At last, the modulation possibility of work function change with built-in electric field and the linear relation between them are obtained.In conclusion, we studied the influence of in-photoelectric effect of semiconductor material with nanostructure and the modulation methods to work function theoretically, which can provide theoretical basis for the THz optical waves inducing the possibility of tunneling current in the future.