Research About Application Of Meso-piezo-capacitive Effect In The Micro Sensor Devices

With the development of modern sensor,thers's to higher requirement for itscharacteristics of specifications and sensitivity, more miniaturization and higher sensitivity isthe further development of new sensors direction. The development of semiconductormaterials, such asⅢ-Ⅴsemiconductor,with the mature of whose research and preparationmethods, making many of the material heterojunction' physical characteristics were excavated,and applied to many electronic device.mesos-piezoresistive effect is a new type of sensingtheories which is based on the heterojunctionⅢ-Ⅴsemiconductor materials.namely thestress distribution in nano structure will change under the mechanics signal,in some conditionthe change of the stress can cause electric field built-in,and then the built-in electric field willlead to the quantum level structure of nanobelts change, quantum level change will causeresonance tunneling current change; in short, near the resonant tunneling voltage through thefour physical process above can make a weak mechanical signal into a strong electrical signal.The sensor based on the Mesoscopic piezoresistive effect have been tested practicely,andproved that it has higher sensitivity, and can make the miniaturization of devices and can beused as a new theoretical basis of NMES sensor, in order to further enrich, explore new sensortheory, this paper presents a new effect meso- piezo-capacitive effect, and its research aboutthe application for the sensors.meso-piezo-capacitive effect, it is to point to in mesoscopic scales, the variable reactancedevice is made by heterojunction material,which will cause the stress distribution change,andthen will lead to the change of material strain,outside ofl the action of stress distribution,cause material changes under a certain mechanics signal, at last the changes of the materialstrain have to make the change of the height and width of heterojunction materials potentialbarrier,and so capacitance will changes.in this paper we carry with a double barrier resonancetunneling (DBRT) structure of the heterojunction reactor as the research object, and analyzes its capacitance characteristics and when the change of the stress and the strain cause byexternal mechanical how influnce the capacitance of the reactance.we can conclude therelationship between mechanic signal with the capacitance characteristics.at last ,we prove themeso-piezo-capacitive effect can be as a kind of theory basis for the miniature sensorsapplied .This paper theoretically proved meso-piezo-capacitive effect, and make the theapplication of the mesoscopic piezoresistive effect as the foundation, to provide a new ideafor application of micro sensors.