Research On Sb Laser Material And Device For AlGaAsSb/InGaAsSb On GaAs Substrate

There is 7%mislattice between GaAs and InGaAsSb materials,we made a series of experiments to study GaSb,AlSb buffer layers.By optimizing GaSb AlSb buffer layer growth parameters:Ⅴ/Ⅲgrowth temperature growth thickness,we obtained good crystal GaSb/AlSb/GaAs.The experiments proved the fit growth temperature is 480℃,theⅤ/Ⅲratio is 20 in AlSb epi-growth and the epi-thickness is 1.2 nm.It is best to improve the crystal quality.We designed and characterizated AlGaAsSb/InGaAsSb sigle quantum well laser materials,by atom force microscope(AFM)Hall effect Photolimunicence(PL)the epi-layer,preparated the device,obtained some results,it is a foundation to further growth and obtain high performance devices.