Growth Of GAN Ecr-pemocvd Rheed Study Of Image

GaN and its related nitrides are more and more attracting because of their super properties, such as wide band gap, high electron saturation drift velocity, low dielectric constant, high thermal conductivity, good chemical and thermal stability and so on. Therefore, they are suited for manufacturing LED and LD in the range from blue-green to ultraviolet and other opto-electronic devices, they are also suited for manufacturing high-temperature, high-frequency, high-power electronic or microwave devices.Under the support of National Natural Science Foundation of China ?"Growth of self-organized GaN quantum dots structures by ECR-PEMOCVD and its characteristics (No.69976008)" , this thesis was finished successfully. The initial growth technologies of GaN hetero-epitaxy on sapphire substrate were groped by using ECR-PEMOCVD method on a homemade device -ESPD-U, and the parameters of experiment were optimized.In the experiment, TEGa and nitrogen plasma are used as sources of Ga and nitrogen respectively, RHEED is used as in situ monitoring to analyze quality of growing surface during the initial stages. Effects of pretreatment conditions such as plasma cleaning, nitridation and buffer layer growth to GaN/Al2O3 epilayer quality were also discussed.During experiment processes, their RHEED images showed that the GaN epilayer with good crystal quality are obtained by using the optimized parameters, so it demonstrated that the optimized parameters were reasonable and suitable.