Study On Modulating Performances Of CuPc Based Memory Device By Using LiF As The Buffer Layer

Organic diode memory devices have attracted extensive attention due to their excellent properties such as simple device structure, easy preparation, and significant potential for high density and high integration applications. However, some problems exist to get high density and high integration performance for organic diode memory devices, such as the stability of the memory devices and the misreading data caused by crosstalk current. Therefore, it is significant to solve the problem of crosstalk current to get more excellent device performance.In this paper, a series of CuPc based organic diode memory devices with different structures are designed and prepared. The memory devices exhibit a stable performance of me mory with large self-rectifying effects by using a buffer layer to control the interface. Meanwhile, the summary of experiments and mechanism analysis reveal the potential of the buffer layer in the organic diode memory devices for applications, and these properties of the device are proposed to alleviate the sneaking current in cross-bar array structure.(1) Resistive switching behaviors in the ITO/LiF/CuPc/Al device is reported with a significant self-rectifying. The application of the buffer layer in the device makes a increased ON/OFF current ratio, a more stable hysteresis and a very impressive rectification ratio. The anode buffer layer affects the interface modification, and it makes the trapped charge in the layer released or filled, causes huge difference of the forward-to-reverse current.(2) Introducing the buffer layer to the organic diode memory device could improve the performance of the device, therefore, the anode buffer layer is further studied in the heterojunction device structure. Different location of LiF in the device demonstrates that the performance of device will be improved when the buffer layer is between the ITO anode and the active layer. Meanwhile, different heterojunction structure of the device also improves the performance of the devices, it shows the universality of the buffer layer in other heterojunction structure of the organic diode memory.(3) A series of different multi- layer structure of the organic diode memory device are designed by using the the buffer layer, research of the performance of devices with different scanning directions and the applied voltage proves that the anode buffer layer in the multilayer structure of the device could be extended.