Study On 5GHz Silicon Bipolar Transistor

This paper mainly researched on the technology of the emitter of the high-frequency devices-the poly-silicon, conducted a study on its production process, the main process parameters and it's optimization. In the end, we successfully developed a complete set of 1μm prepared microwave transistor technology by the optimization results. The major work and achievements list as follows:1.Design the vertical and horizontal structure of the microwave transistor according to its design specifications, and then verify it through theoretical caculation.2.Make use of the decompression to form the collector structure with a small resistance in series through the 2μm uniform epitaxial layer on the high concentrations of arsenic-doped substrate which was made by.3.Using High-temperature Si3N4 as a dielectric layer, we can reduce the leakage current effectively.4.Form a very small base width and adjustable uniform by using the special whole area structure, uniform polysilicon emitter buffer layer can form a uniform light emitter, which laid the foundation for the production of high-frequency devices. At last we designed a set of reasonable bipolar manufacturing process by considering the boron concentration on the device base, weak base, as well as emitter injection conditions, RTA conditions and its optimization process comprehensively.5.By a detailed study on the fine lines of aluminum dry etching, we find the best processby changing the flow and ratio of the reaction gas and RF power, magnetic field test groping.6. Through process optimization, we successfully developed a complete set of the manufacturing process of the 1μm polysilicon emitter. and the corresponding characteristic frequency is expected to reach 5GHz, the DC performance is excellent. For the production of more high-frequency microwave devices technology research accumulated experience.all of these provides experiences for the technology research on higher frenquency devices in future.