The Research And Manufacture Of 3.1～3.4GHz-45W Silicon Microwave Pulsed Power Transistor

Due to the small volume, light weight, high power, high gain and high reliability, the solid state silicon microwave pulsed power transistors have a widely application in communication, radar, and electron countermeasure(ECM). Based on the consideration of silicon microwave pulsed power transistor design, the device frequency performance, output power and power gain are analyzed. For 3.1～3.4GHz-45W silicon microwave pulsed power transistor, the internal matching and combinating network of transistor are studied. Commonly used T network is introduced. The design of T network is emphasized. Aimed at the actual engineering requirement, design of the device reliability is carried out, especially assembling and bonding technology quality to influence device reliability are analyzed, and some solutions are proposed. At last, the transistor of output power of 45W with 7.0dB power gain and 36%collector efficiency under pulsed operation(pulse width300μs at 10%duty,power supply voltage:32v)across the 3.1 to 3.4GHz is manufactured successfully.